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Conventional failure analysis methods have failed to scale with modern semiconductors, which are larger, more complex, and incorporate a wider variety of materials than ever before. Ion Beam Etch, or IBE, overcomes the challenges that conventional failure analysis methods cannot.
IBE provides a uniform etch no matter the material, exposes large areas of interest with nanometer-level accuracy, and minimizes damage to the underlying layer. In this video, we explain the science behind ion beam etch and what makes it the ideal method for failure analysis.
Video Transcript
Today’s semiconductor devices are larger, more complex, and incorporate a wider variety of materials than ever before. Conventional failure analysis methods are increasingly challenged by small feature sizes, defect isolation over large areas, and surface damage to the area of interest.
Ion Beam Etch, or IBE, overcomes these challenges, providing a uniform etch no matter the material, exposing large areas of interest with nanometer-level accuracy, while minimizing damage to the underlying layer.
In IBE, gas is introduced into the source where a high-density plasma is generated, as the gas atoms collide with electrons to become ionized. They then exit the source through a grid that controls the acceleration and energy and collimates the beam towards the substrate. No substrate biasing is required since the ions have an energy defined by the grid. This technique also provides the ability to control the angle of incidence.
These traits make Ion Beam Etching ideal for applications including semiconductor failure analysis, prototyping, electrical fault identification, and competitive analysis.
Additionally, incorporating Reactive Ion Beam Etch or Chemically Assisted Ion Beam Etch can offer enhanced rate selectivity for certain materials. This makes IBE ideal for applications that require
- Defect isolation over large areas,
- Uniform etch through different materials and
- Avoiding surface damage to the area of interest
Fine control over the ion beam enables both high-energy ions for rapid material removal and a low-energy etch for the last few nanometers that minimizes damage to the metal underlayers, making it the perfect solution for failure analysis in the MEMS, semiconductor, and data storage markets as well pilot production, and foundry support.
To learn more about Ion Beam Etch, visit dentonvacuum.com.
If you are interested in learning more about Denton’s failure analysis systems, contact us today!